METAL-INSULATOR TRANSITIONS AND STRONG ELECTRON CORRELATIONS
نویسندگان
چکیده
منابع مشابه
Metal-Insulator and Superconductor-Insulator Transitions in Correlated Electron Systems
Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent z = 4 where the origin of unusual metallic properties near the Mott insulator are ascribed to the proximity of the transition. The scaling near the transition indicates the formation of flat dispersion area due to singular momentum de...
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I present an informal discussion of various cases where two-dimensional surface metal-insulator structural and charge-density-wave instabilities driven by partly filled surface states have been advocated. These include reconstructions of clean semiconductor surfaces and of W(100) and Mo(100), as well as anomalies on the hydrogen-covered surfaces H/W(110) and H/Mo(110), and possibly alkali-cover...
متن کاملMetal-Insulator Transitions at Surfaces
Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram should be expected to have the same topology as the phase diagram for magnetic order at surfaces: The corresponding linearized mean-field descriptions, a si...
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Metal-insulator transitions driven by disorder (∆) and/or by electron correlations (U) are investigated within the Anderson-Hubbard model with local binary-alloy disorder using a simple but consistent mean-field approach. The ∆–U phase diagram is derived and discussed for T = 0 and finite temperatures.
متن کاملCorrelations between pressure and bandwidth effects in metal–insulator transitions in manganites
The effect of pressure on the metal–insulator transition in manganites with a broad range of bandwidths is investigated. A critical pressure is found at which the metal–insulator transition temperature, TMI , reaches a maximum value in every sample studied. The origin of this universal pressure and the relation between the pressure effect and the bandwidth on the metal–insulator transition are ...
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ژورنال
عنوان ژورنال: International Journal of Modern Physics B
سال: 1993
ISSN: 0217-9792,1793-6578
DOI: 10.1142/s0217979293002961